{{flagHref}}
Products
  • Products
  • Categories
  • Blog
  • Podcast
  • Application
  • Document
|
/ {{languageFlag}}
Select Language
Stanford Advanced Materials {{item.label}}
Stanford Advanced Materials
Select Language
Stanford Advanced Materials {{item.label}}

Discontinued (Discontinued) GA2171 Gallium Arsenide Wafer (GaAs)

Catalog No. GA2171
Material GaAs
Thickness 350 um ~ 625 um
Diameter Ø 2" / Ø 3" / Ø 4"

Stanford Advanced Materials (SAM) offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method, allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality.

Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

INQUIRY
Add to Compare
GA2171 Gallium Arsenide Wafer
GA2171 Gallium Arsenide Wafer
Description
Specification
SDS
Reviews

GET A QUOTE

Send us an inquiry today to learn more and receive the latest pricing. Thank you!

* Your Name
* Your Email
* Product Name
* Your Phone
* Country

United States

    Comments
    I would like to join the mailing list to receive updates from Stanford Advanced Materials.
    Attach Drawing:

    Drop files here or

    * Check Code
    Accepted file types: PDF, png, jpg, jpeg. Upload multiple files at once; each file must be under 2MB.
    Leave A Message
    Leave A Message
    * Your Name:
    * Your Email:
    * Product Name:
    * Your Phone:
    * Comments: